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| Power Transistors 2SD2064 Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1371 Unit: mm q q q q q 16.20.5 12.5 3.5 Solder Dip Satisfactory foward current transfer ratio hFE vs. collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 120 120 5 10 6 70 3 150 -55 to +150 Unit V V V A A W C C 0.7 s Features 15.00.3 11.00.2 5.00.2 3.2 21.00.5 15.00.2 3.20.1 2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 1:Base 2:Collector 3:Emitter TOP-3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current (TC=25C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = 120V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20mA VCE = 5V, IC = 1A VCE = 5V, IC = 4A VCE = 5V, IC = 4A IC = 4A, IB = 0.4A VCE = 5V, IC = 0.5A, f = 1MHz VCB = 10V, IE = 0, f = 1MHz 20 80 20 60 20 1.8 2.0 V V MHz pF 200 min typ max 50 50 Unit A A Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance *h FE2 Rank classification Q 60 to 120 S 80 to 160 P 100 to 200 Rank hFE2 1 Power Transistors PC -- Ta 80 2SD2064 IC -- VCE 12 TC=25C 10 10 12 VCE=5V IC -- VBE Collector power dissipation PC (W) 70 60 50 40 30 20 10 (1) Collector current IC (A) Collector current IC (A) (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3W) IB=500mA 400mA 300mA 200mA TC=-25C 8 25C 100C 8 6 150mA 100mA 6 4 50mA 2 10mA 4 (2) 2 (3) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0 0 1 2 3 4 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=10 30 10 3 1 0.3 -25C 0.1 0.03 0.01 0.01 0.03 TC=100C 25C 1000 hFE -- IC VCE=5V 1000 fT -- IC VCE=5V f=1MHz TC=25C Forward current transfer ratio hFE 300 Transition frequency fT (MHz) 1 3 10 TC=100C -25C 25C 300 100 100 30 30 10 10 3 3 0.1 0.3 1 3 10 1 0.01 0.03 0.1 0.3 1 0.01 0.03 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 1000 Area of safe operation (ASO) 100 IE=0 f=1MHz TC=25C 30 Non repetitive pulse TC=25C ICP IC 100ms 1 DC 0.3 0.1 0.03 Collector output capacitance Cob (pF) 300 Collector current IC (A) 10 3 100 t=10ms 30 10 3 1 1 3 10 30 100 0.01 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 10000 Note: Rth was measured at Ta=25C and under natural convection. (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 2SD2064 Thermal resistance Rth(t) (C/W) 1000 100 (1) 10 (2) 1 0.1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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